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  cph5504 no. 6793-1/7 1 : collector 2 : collector 3 : base 4 : emitter common 5 : base sanyo : cph5 2 1 4 53 2.9 0.05 0.4 2.8 1.6 0.2 0.6 0.6 0.9 0.2 0.15 0.95 62712 tkim/62005ea msim tb-00001409/21401 tsim ta-2946 http:// semicon.sanyo.com/en/network ordering number : en6793b applications ? dc-dc converter, relay drivers, lamp drivers, motor drivers, ash features ? composite type with 2 npn transistors in one package facilitating high-density mounting ? the cph5504 is composed of 2 chips each equivaient to the cph3205 ? ultrasmall package facilitates miniaturization in end products. (mounting height : 0.9mm) speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo 100 v collector-to-emitter voltage v ces 100 v collector-to-emitter voltage v ceo 50 v emitter-to-base voltage v ebo 6v collector current i c 3a collector current (pulse) i cp 6a base current i b 600 ma collector dissipation p c mounted on a ceramic board (600mm 2 0.8mm) 0.9 w total power dissipation p t mounted on a ceramic board (600mm 2 0.8mm) 1.2 w junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7017a-009 cph5504 npn epitaxial planar silicon transistor high-current switching applications product & package information ? package : cph5 ? jeita, jedec : sc-74a, sot-25 ? minimum packing quantity : 3,000 pcs./reel packing type : tl marking electrical connection CPH5504-TL-E ed lot no. tl 54 3 12 sanyo semiconductors data sheet
cph5504 no. 6793-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =40v, i e =0a 1 a emitter cutoff current i ebo v eb =4v, i c =0a 1 a dc current gain h fe 1v ce =2v, i c =100ma 200 560 h fe 2v ce =2v, i c =3a 70 gain-bandwidth product f t v ce =10v, i c =500ma 380 mhz output capacitance cob v cb =10v, f=1mhz 13 pf collector-to-emitter saturation voltage v ce (sat) i c =1a, i b =50ma 80 120 mv i c =2a, i b =100ma 140 210 mv base-to-emitter saturation voltage v be (sat) i c =2a, i b =100ma 0.88 1.2 v collector-to-base breakdown voltage v (br)cbo i c =10 a, i e =0a 100 v collector-to-base breakdown voltage v (br)ces i c =100 a,r be =0 100 v collector-to-emitter breakdown voltage v (br)ceo i c =1ma, r be = 50 v emitter-to-base breakdown voltage v (br)ebo i e =10 a, i c =0a 6 v turn-on time t on see speci ed test circuit. 35 ns storage time t stg 300 ns fall time t f 22 ns switching time test circuit ordering information device package shipping memo CPH5504-TL-E cph5 3,000pcs./reel pb free + + 50 input outpu t v r r b r l v cc =25v 100 f 470 f v be = --5v pw=20 s i b1 i b2 d.c. 1% 10i b1 = --10i b2 =i c =1a
cph5504 no. 6793-3/7 0 i c -- v ce 0 0.4 0.8 1.2 1.6 2.0 i b =0ma collector-to-emitter voltage, v ce -- v collector current, i c -- a 1.0 1.5 0.5 2.5 3.0 2.0 4.5 5.0 4.0 3.5 base-to-emitter voltage, v be -- v i c -- v be collector current, i c -- a 3.0 1.5 1.0 2.5 2.0 0.5 0 0 0.2 0.4 0.6 0.8 1.0 --25 c v ce =2v ta=75 c 25 c it02464 it02465 80ma 100ma 5.0ma 20ma 10ma 40ma 60ma collector current, i c -- a v ce (sat) -- i c collector-to-emitter saturation voltage, v ce (sat) -- mv 23 57 23 57 0.01 0.1 23 5 1.0 10 100 7 5 3 2 1000 7 5 3 2 it02469 -- 2 5 c ta=75 c 25 c collector-to-base voltage, v cb -- v cob -- v cb output capacitance, cob -- pf 23 57 23 57 7 0.1 1.0 23 5 10 10 7 5 3 2 100 7 5 3 2 it02468 collector current, i c -- a v ce (sat) -- i c collector-to-emitter saturation voltage, v ce (sat) -- mv 10 100 0.01 0.1 2 0.01 0.1 23 57 1.0 23 5 23 5 7 357 1.0 23 5 23 5 7 7 5 3 2 1000 7 5 3 2 f=1mhz collector current, i c -- a v be (sat) -- i c base-to-emitter saturation voltage, v be (sat) -- mv 100 1000 7 5 3 2 5 3 2 it02470 it02471 i c / i b =20 i c / i b =50 --25 c ta=75 c 25 c i c / i b =50 ta= --25 c 75 c 25 c collector current, i c -- a h fe -- i c dc current gain, h fe 10 100 23 57 0.01 0.1 23 57 23 1.0 2 3 5 7 1000 2 3 5 7 --25 c ta=75 c it02466 collector current, i c -- a f t -- i c gain bandwidth product, f t -- mhz 100 5 7 3 2 1000 5 7 3 2 23 57 23 57 0.01 0.1 23 5 1.0 it02467 v ce =10v v ce =2v 25 c
cph5504 no. 6793-4/7 ambient temperature, ta -- c p c -- ta collector dissipation, p c -- w 0 0.2 0.4 0.6 0.8 0.9 1.0 1.2 1.4 0 20 40 60 80 100 120 140 160 collector-to-emitter voltage, v ce -- v a s o collector current, i c -- a 2 3 5 7 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 23 57 23 57 23 57 0.1 1.0 10 dc operation 10ms i cp =6a i c =3a it02472 it02473 1ms 100ms 100 s 500 s ta=25 c single pulse mounted on a ceramic board (600mm 2 0.8mm) 1unit total dissipation 1unit mounted on a ceramic board (600mm 2 0.8mm) collector dissipation, p c (tr1) -- w p c (tr2) -- p c (tr1) collector dissipation, p c (tr2) -- w 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 it02474 mounted on a ceramic board (600mm 2 0.8mm)
cph5504 no. 6793-5/7 embossed taping speci cation CPH5504-TL-E
cph5504 no. 6793-6/7 outline drawing land pattern example CPH5504-TL-E mass (g) unit 0.02 * for reference mm unit: mm 0.6 2.4 1.4 0.95 0.95
cph5504 ps no. 6793-7/7 this catalog provides information as of june, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.


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